Method and apparatus of power ring positioning to minimize crosstalk

ABSTRACT

A method and/or an apparatus of power ring positioning to minimize crosstalk are disclosed. In one embodiment, a method includes generating an array of fingers between a power ring and a die, applying a signal wire between a bond pad of the die and a particular finger of the array of fingers, and applying a shielding wire between an adjacent bond pad and the power ring, such that the shielding wire is longer than the signal wire and does not couple to any of the array of fingers. The shielding wire may be placed between adjacent ones of the signal wire to minimize crosstalk between the adjacent ones of the signal wire.

CLAIM OF PRIORITY

This is a Divisional application which claims priority from U.S. Utilitypatent application Ser. No. 11/590,961 titled “METHOD AND APPARATUS OFPOWER RING POSITIONING TO MINIMIZE CROSSTALK” filed on Oct. 31, 2006 nowU.S. Pat. No. 7,569,472.

FIELD OF TECHNOLOGY

This disclosure relates generally to the technical fields of electronicsand integrated circuit (IC) technology and, in one example embodiment,to a method and/or an apparatus power ring positioning to minimizecrosstalk.

BACKGROUND

A wire used in wire bonding may behave more like a transmission line asspeed increases. As this happens, intrinsic inductance and/orcapacitance of an adjacent wire and the wire may cause signal integrityissues as switching of voltages of the wire creates an unwanted voltagealteration on the adjacent wire. A shielding wire may be used in betweenthe wire and the adjacent wire (e.g., the shielding wire may be coupledto a fixed voltages source like VDD or ground).

The shielding wire may run along an entire length of the wire and theadjacent wire. As a result, the shielding wire may be connected toshielding fingers (e.g., junction points where the shielding wire andsignal wires may be coupled), which are usually limited in quantity(e.g., because the signal fingers may contribute to a physical size ofan integrated circuit). Reserving signal fingers for the shielding wiremay increase cost of the integrated circuit (e.g., increase in materialcost, heat, etc.).

In addition, as more and more signal fingers are placed on theintegrated circuit, the signal fingers move further along a periphery.As a result, the periphery may be bigger and may move farther away frombond pads. This may cause stray coupling between wires. Furthermore,having more of the shielding wire may require additional input/outputdevices which can also contribute to increased costs of the integratedcircuit.

SUMMARY

A method and/or an apparatus of power ring positioning to minimizecrosstalk are disclosed. In one aspect, a method includes generating anarray of fingers between a power ring and a die, applying a signal wirebetween a bond pad of the die and a particular finger of the array offingers, and applying a shielding wire between an adjacent bond pad andthe power ring, such that the shielding wire is longer than the signalwire and does not couple to any of the array of fingers.

The shielding wire may be placed between adjacent ones of the signalwire to minimize crosstalk between the adjacent ones of the signal wire.The method may include creating at least one of the shielding wire andthe signal wire from a metal including copper, aluminum, silver, and/oran aluminum doped alloy. The array of fingers may be moved directlyadjacent to the die, such that a length of the signal wire decreases byat least 20% from that of a design in which the power ring is locatedbetween the die and the array of fingers. A silicon area of the die maybe decreased because separate shielding input/output devices may not berequired when the shielding wire does not couple to any of the array offingers. An effect of a crosstalk may be minimized when the shieldingwire is between two signal wires on either side of the shielding wire.The crosstalk may be further reduced by shortening the signal wire froma design in which the power ring is located between the die and thearray of fingers.

In another aspect, a method includes generating a power ring between anarray of fingers and a die, coupling a set of conductive arms which eachperpendicularly extend from the power ring to a location at a farthestedge of each finger of the array of fingers, applying a signal wirebetween a bond pad of the die and a particular finger of the array offingers, and applying a shielding wire between an adjacent bond pad andthe power ring, such that the shielding wire is substantially equal inlength to the signal wire and such that the shielding wire couples to aparticular conductive arm of the set of conductive arms rather than toany of the array of fingers.

In yet another aspect, a microelectronic assembly includes a die betweena high density multilayer wiring board and a resin, a power ring and anarray of fingers of the high density wiring board adjacent to the die, aset of conductive arms which each perpendicularly extend from the powerring to a location at a farthest edge of each finger of the array offingers, a set of signal wires each between a bond pad of the die and aparticular finger of the array of fingers, and a set of shielding wireseach between an adjacent bond pad and the power ring, such that eachshielding wire is substantially equal in length to each signal wire andsuch that each shielding wire couples to a particular conductive arm ofthe set of conductive arms rather than to any of the array of fingers.

The methods, systems, and apparatuses disclosed herein may beimplemented in any means for achieving various aspects, and may beexecuted in a form of a machine readable medium embodying a set ofinstructions that, when executed by a machine, cause the machine toperform any of the operations disclosed herein. Other features will beapparent from the accompanying drawings and from the detaileddescription that follows.

BRIEF DESCRIPTION OF THE DRAWINGS

Example embodiments are illustrated by way of example and not limitationin the figures of the accompanying drawings, in which like referencesindicate similar elements and in which:

FIG. 1 is a cross-sectional view of a wire bond package and dieconnection layout, according to one embodiment.

FIG. 2 is a cross-sectional view of a wire bond package and dieconnection illustrating method of positioning the power ring, accordingto one embodiment.

FIG. 3 is an assembly view of microelectronic assembly of a die,according to one embodiment.

FIG. 4 is a process flow of generating an array of fingers between apower ring and the die, according to one embodiment.

FIG. 5 is a process flow of generating the power ring between the arrayof fingers and the die, according to one embodiment.

Other features of the present embodiments will be apparent from theaccompanying drawings and from the detailed description that follows.

DETAILED DESCRIPTION

A method and/or an apparatus of power ring positioning to minimizecrosstalk are disclosed. In the following description, for the purposesof explanation, numerous specific details are set forth in order toprovide a thorough understanding of the various embodiments. It will beevident, however to one skilled in the art that the various embodimentsmay be practiced without these specific details.

In one embodiment, a method includes generating an array of fingers(e.g., fingers 104 of FIG. 1) between a power ring (e.g., a power ring102 of FIG. 1) and a die (e.g., a die 100 of FIG. 1), applying a signalwire between a bond pad (e.g., a bond pad 110 of FIG. 1) of the die anda particular finger of the array of fingers (e.g., fingers 104 of FIG.1), and applying a shielding wire between an adjacent bond pad and thepower ring, such that the shielding wire is longer than the signal wireand does not couple to any of the array of fingers (e.g., as describedin FIG. 1).

In another embodiment, a method includes generating a power ring betweenan array of fingers and a die, coupling a set of conductive arms (e.g.,a conductive arm 212 of FIG. 2) which each perpendicularly extend fromthe power ring to a location at a farthest edge of each finger of thearray of fingers, applying a signal wire between a bond pad of the dieand a particular finger of the array of fingers (e.g., fingers 204 ofFIG. 2), and applying a shielding wire between an adjacent bond pad andthe power ring, such that the shielding wire is substantially equal inlength to the signal wire and such that the shielding wire couples to aparticular conductive arm of the set of conductive arms rather than toany of the array of fingers (e.g., as described in FIG. 2).

In yet another embodiment, a microelectronic assembly includes a die(e.g., a die 300 of FIG. 3) between a high density multilayer wiringboard (e.g., a high density multilayer wiring board of FIG. 3) and aresin, a power ring and an array of fingers of the high density wiringboard adjacent to the die, a set of conductive arms which eachperpendicularly extend from the power ring to a location at a farthestedge of each finger of the array of fingers, a set of signal wires eachbetween a bond pad of the die and a particular finger of the array offingers, and a set of shielding wires each between an adjacent bond padand the power ring, such that each shielding wire is substantially equalin length to each signal wire and such that each shielding wire couplesto a particular conductive arm of the set of conductive arms rather thanto any of the array of fingers (e.g., as described in FIG. 3).

FIG. 1 is a cross-sectional view of a wire bond package and dieconnection layout, according to one embodiment. Particularly, FIG. 1illustrates a die 100, a power ring 102, a finger(s) 104, a shieldingwire(s) 106, and a signal wire(s) 108, according to one embodiment.

The die 100 may be an integrated circuit (e.g., an optical die, a microelectromechanical system die etc.) that may be bonded upright into thesubstrate and/or electrically connected (e.g., gold wire, aluminum wireetc.) to the bond pad 110 and traces on the substrate. The power ring102 may be power and/or ground ring of a wire bond that may be used tosupply power and/or ground into a semiconductor device. The finger(s)104 may be array of bonding site with in the package that may connectsignals and/or discrete power.

The shielding wire(s) 106 may be a metallic wire (e.g., of copper,aluminum, silver, an aluminum doped alloy etc.) that may be used tocarry the input and/or output signals within the semiconductor device.The shielding wire 106 may not couple with array of fingers 104 that mayeliminate the usage of shielding input/output devices and hence mayreduce the silicon area of the die 100. The signal wire(s) 108 may be ametallic wire (e.g., of copper, aluminum, silver, an aluminum dopedalloy etc.) that may be built using regular metal routing layers of thesemiconductor design.

The signal wire(s) 108 may connect the bond pad and the associatedinput/output device (e.g., device used to interface core logic with theexternal ASIC/ASSP environment). The bond pad 110 may be a site on theperiphery of a silicon die (e.g., a Rapid chip, Field programmable die,etc.) that may make connection with one of the bond wire (e.g., theshielding wire 106, the signal wire 108 of FIG. 1).

In example embodiment illustrated in FIG. 1, the die 100 may beinstalled centrally on a circuit board (e.g., a high density multilayerwiring board 302 of FIG. 2). The power ring 102 as illustrated in FIG. 1may be located on the high density multilayer wiring board 302 of FIG. 3to supply power or ground to the semiconductor device. The fingers 104may be located on the high density multilayer wiring board 302 of FIG. 3in the form of array. The fingers 104 may be arranged such that eachfinger 104 connects at least one package ball, according to the exampleembodiments illustrated in FIG. 1.

The shielding wires 106 may be connected from the bond pad 110 to thepower rings 102 and may be placed between adjacent ones of the signalwire 108 to minimize the crosstalk effect as illustrated in exampleembodiment of FIG. 1. The shielding wire 106 may be made from at leastone of metal including copper, aluminum, silver, and an aluminum dopedalloy. The shielding wire 106 may not couple with the fingers 104thereby reduces the silicon area of die 100, according to exampleembodiment of FIG. 1.

In example embodiment illustrated in FIG. 1, the signal wire 108 may beconnected between a bond pad 110 of the die 100 and the finger 104. Thesignal wire 108 may be shortened from that of design by moving the arrayof fingers 104 adjacent to the die 100 and thus may minimize thecrosstalk effect. The bond pad 110 may be installed on the die 100 asillustrated in example embodiment FIG. 1. The bond pad 110 of the die100 may be electrically connected to trace of the circuit board throughthe first bonding line.

The array of fingers 104 may be generated between the power ring 102 andthe die 100. The signal wire 108 may be applied between a bond pad ofthe die 100 and a particular finger of the array of fingers. Theshielding wire 106 may be applied between (e.g., the shielding wire 106may be placed between adjacent ones of the signal wire to minimizecrosstalk between the adjacent ones of the signal wire) an adjacent bondpad 110 and the power ring 102, such that the shielding wire 106 islonger than the signal wire 108 and does not couple to any of the arrayof fingers.

The shielding wire and/or the signal wire may be created from a metalincluding copper, aluminum, silver, and an aluminum doped alloy. Thearray of fingers may be moved directly adjacent to the die (e.g., thedie 100 of FIG. 1), such that a length of the signal wire decreases byat least 20% from that of a design in which the power ring 102 may belocated between the die 100 and the array of fingers. Furthermore, asilicon area of the die (e.g., the die 100 of FIG. 1) may be decreasedsince separate shielding input/output devices may not be required whenthe shielding wire 106 does not couple to any of the array of fingers.In addition, an effect of a crosstalk may be minimized when theshielding wire 106 is between two signal wires on either side of theshielding wire 106.

FIG. 2 is a cross-sectional view of a wire bond package and the die(e.g., the die 100 of FIG. 1) connection illustrating method ofpositioning the power ring 202, according to one embodiment.Particularly, FIG. 2 illustrates a die 200, a power ring 202, afinger(s) 204, a shielding wire(s) 206, a signal wire(s) 208, and aconductive arm 212, according to one embodiment.

The die 200 may be an integrated circuit (e.g., an optical die, a microelectromechanical system die etc.) that may be bonded upright into thesubstrate and/or electrically connected (e.g., gold wire, aluminum wireetc.) to the bond pad 210 and traces on the substrate. The power ring202 may be power and/or ground ring of a wire bond that may be used tosupply power and/or ground into a semiconductor device. The finger(s)204 may be array of bonding site with in the package that may connectsignals and/or discrete power.

The shielding wire(s) 206 may be a metallic wire (e.g., of copper,aluminum, silver, an aluminum doped alloy etc.) that may be used tocarry the input and/or output signals within the semiconductor deviceand/or may be coupled to the set of conductive arm that may extendperpendicularly from the power ring 202. The signal wire(s) 208 may be ametallic wire (e.g., of copper, aluminum, silver, an aluminum dopedalloy etc.) that may be built using regular metal routing layers of thesemiconductor design. The signal wire(s) 208 may connect the bond pad(e.g., bond pad 210 of FIG. 2) and the associated input/output device(e.g., device used to interface core logic with the external ASIC/ASSPenvironment).

The bond pad 210 may be a site on the periphery of a silicon die (e.g.,a Rapid chip, a Field programmable die, etc.) that may make connectionwith one of the bond wire (e.g., the shielding wire 206, the signal wire208 of FIG. 1). The conductive arms 212 may be coupled with the farthestedge of the fingers 104 to reverse the configurations of the signal andthe power ring 202 so that the crosstalk effect may be minimized andalso high speed IO signals may be achieved.

In example embodiment illustrated in FIG. 2, the die 200 may beinstalled centrally on a circuit board (e.g., a high density multilayerwiring board 302 of FIG. 2). The power ring 202 as illustrated in FIG. 2may be located on the high density multilayer wiring board 302 of FIG. 3to supply power or ground to the semiconductor device. The power ring202 may be located between the die 200 and array of fingers 204 when thesignal wire 208 shortens and/or array of fingers move adjacent to thedie 300. The fingers 204 may be located on the high density multilayerwiring board 302 of FIG. 3 in the form of array. The fingers 204 may bearranged such that each finger 104 connects at least one package ball,according to the example embodiments illustrated in FIG. 2.

The fingers 204 may be moved adjacent to the die 200 such that thelength of the signal wire 108 reduces by at least 20% from that of adesign and thus may minimize the crosstalk effect. The shielding wires206 as illustrated in example embodiment of FIG. 2 may be connected fromthe bond pad 210 to the power rings 202 such that the shielding wire 206may be substantially equal in length to that of the signal wire (e.g.,signal wire(s) 206 of FIG. 2) and/or the shielding wire 206 may couplewith the particular conductive arm of set of conductive arm 212. Theshielding wire 206 may be placed between adjacent ones of the signalwire 208 to minimize the crosstalk effect as illustrated in exampleembodiment of FIG. 2. The shielding wire 206 may be made from at leastone of metal including copper, aluminum, silver, and an aluminum dopedalloy. The shielding wire 206 may not couple with the fingers 204thereby reduces the silicon area of die 200, according to exampleembodiment of FIG. 2.

In example embodiment illustrated in FIG. 2, the signal wire 208 may beconnected between the bond pad 210 of the die 200 and the finger 204.The signal wire 208 may be shortened from that of design by moving thearray of fingers 204 adjacent to the die 200 and thus may minimize thecrosstalk effect. The bond pad 210 may be installed on the die 200 asillustrated in example embodiment FIG. 2. The bond pad 210 of the die200 may be electrically connected through the first bonding line traceof the circuit board. In the example embodiment illustrated in FIG. 2,the conductive arms 212 may extend perpendicularly from the power ring202 to a location at a farthest edge of each finger (e.g., the finger204 of FIG. 2) when the location of the power ring 202 is between thedie 200 and the array of fingers (e.g., the finger(s) 204 of FIG. 2).

For example, the crosstalk may be reduced by shortening the signal wire(e.g., signal wire(s) 208 of FIG. 2) from a design in which the powerring (e.g., power ring 202 of FIG. 2) is located between the die (e.g.,the die 200 of FIG. 2) and the array of fingers 204. A method includesgenerating a power ring between an array of fingers and the die (e.g.,the die 200 of FIG. 2). A set of conductive arms (e.g., the conductivearm 212 of FIG. 2) which each perpendicularly extend from the power ring(e.g., the power ring 202 of FIG. 2) may be coupled to a location at afarthest edge of each finger of the array of fingers.

The signal wire 208 may be applied between a bond pad (e.g., bond pad210 of FIG. 2) of the die 200 and a particular finger of the array offingers. Also, a shielding wire 206 may be applied between (e.g., theshielding wire may be placed between adjacent ones of the signal wire208 to minimize crosstalk between the adjacent ones of the signal wire)an adjacent bond pad (e.g., the bond pad 210 of FIG. 2) and the powerring 202, such that the shielding wire 206 is substantially equal inlength to the signal wire 208 and such that the shielding wire 206couples to a particular conductive arm (e.g., the shielding wire(s) 206of FIG. 2) of the set of conductive arms rather than to any of the arrayof fingers.

The shielding wire (e.g., the shielding wire(s) 206 of FIG. 2) and thesignal wire (e.g., the signal wire(s) 208 of FIG. 2) may be created froma metal including copper, aluminum, silver, and an aluminum doped alloy.The array of fingers may be moved directly adjacent to the die (e.g.,the die 200 of FIG. 2), such that a length of the signal wire (e.g., thesignal wire(s) 208 of FIG. 2) decreases by at least 20% from that of adesign in which the power ring (e.g., the power ring 202 of FIG. 2) maybe located between the die (e.g., the die 200 of FIG. 2) and the arrayof fingers. Furthermore, a silicon area of the die (e.g., the die 200 ofFIG. 2) may be decreased as separate shielding input/output devices maynot be required when the shielding wire 206 does not couple to any ofthe array of fingers. In addition, the method may include minimizing aneffect of a crosstalk when the shielding wire 206 is between two signalwires (e.g., the signal wire(s) 208 of FIG. 2) on either side of theshielding wire (e.g., the shielding wire(s) 206 of FIG. 2). Thecrosstalk may be reduced by shortening the signal wire 208 from a designin which the power ring 202 may be located between the die 200 and thearray of fingers.

FIG. 3 is an assembly view of microelectronic assembly of a die 300,according to one embodiment. Particularly, FIG. 3 illustrates a die 300,a high density multilayer wiring board 302, a resin 304, a chip bump306, a printed circuit board 314, and an external terminal 318,according to one embodiment.

The die 300 be an integrated circuit (e.g., an optical die, a microelectromechanical system die, etc.) that may be bonded upright into thesubstrate and/or electrically connected (e.g., a gold wire, a aluminumwire etc.) to the bond pad 210 and traces on the substrate. The highdensity multilayer wiring board 302 may consist of a plurality of greensheets of crystallizable glass laminated and sintered as a unit that mayinclude a printed conductive pattern. The resin 304 may be fillers(e.g., synthetic, natural, etc.) that may be used for the purpose ofincreasing modulus, lowering coefficient of thermal expansion (CTE) andimproving mechanical properties.

The chip bump 306 may be the flip chip attachment to the package withthe help of solder bumps. The printed circuit board 314 may be used tomechanically support and/or electrically connect electronic componentsusing conductive pathways, traces, etc. etched from copper sheetslaminated onto a non-conductive substrate. The external terminal 318 maybe the conductive terminals that may electrically connect the electroniccomponents (e.g., high density multilayer wiring board with printedcircuit board 314 of FIG. 3).

In the example embodiment illustrated in FIG. 3, the die 300 mayencapsulated between the high density multilayer wiring board 302 andresin 304. The high density multilayer wiring board 302 as illustratedin example embodiment of FIG. 3, containing the die 300 may beelectrically connected to the printed circuit board (e.g., the printedcircuit board 314 of FIG. 3) through the external terminals (e.g., theexternal terminal 318 of FIG. 3). The high density multilayer wiringboard 302 may contain the power ring (e.g., the power ring 102 and thepower ring 202 of FIG. 1 and FIG. 2) and array of fingers (e.g., thefingers 204 and the fingers 204 of FIG. 1 and FIG. 2) located adjacentto the die 300.

In the example embodiment illustrated in FIG. 3, the resin 304 may beplaced on the top of the die 300 that may hold down the die 300 into thehigh density multilayer wiring board 302. The chip bump 306 may beplaced on the conductive substrate with its active side down. Theprinted circuit board 314 illustrated in example embodiment of FIG. 3may mechanically hold and/or electrically connect the high densitymultilayer wiring board 302 containing the die 300 using conductivepathways, traces, etc.

For example, a microelectronic assembly includes the die (e.g., the die300 of FIG. 3) between the high density multilayer wiring board (e.g.,the high density multilayer wiring board of FIG. 3) and the resin (e.g.,the resin 304 of FIG. 3). The microelectronic assembly also includes apower ring (e.g., the power ring 102 of FIG. 1 and the power ring 202 ofFIG. 2) and an array of fingers of the high density wiring board (e.g.,the high density multilayer wiring board 302 of FIG. 3) adjacent to thedie (e.g., the die 300 of FIG. 3), a set of conductive arms which eachperpendicularly extend from the power ring (e.g., the power ring 102 ofFIG. 1 and the power ring 202 of FIG. 2) to a location at a farthestedge of each finger of the array of fingers, a set of signal wires eachbetween a bond pad (the bond pad 110 of FIG. 1 and the bond pad 210 ofFIG. 2) of the die (e.g., the die 300 of FIG. 3) and a particular fingerof the array of fingers and a set of shielding wires each between (e.g.,the set of shielding wires may be placed between adjacent ones of eachsignal wire to minimize crosstalk between the adjacent ones of eachsignal wire) an adjacent bond pad (the bond pad 110 of FIG. 1 and thebond pad 210 of FIG. 2) and the power ring (e.g., the power ring 102 ofFIG. 1 and the power ring 202 of FIG. 2), such that each shielding wiremay be substantially equal in length to each signal wire and such thateach shielding (e.g., the shielding wire(s) 106 of FIG. 1 the shieldingwire(s) 206 of FIG. 2) wire couples to a particular conductive arm(e.g., the conductive arm 212 of FIG. 2) of the set of conductive armsrather than to any of the array of fingers.

In addition, shielding wire (e.g., the shielding wire(s) 106 of FIG. 1and the shielding wire(s) 206 of FIG. 2) and each signal wire (e.g., thesignal wire(s) 108 of FIG. 1 and the signal wire(s) 208 of FIG. 2 may becreated from at least one of a metal including copper, aluminum, silver,and an aluminum doped alloy. A silicon area of the die (e.g., the die300 of FIG. 3) may be decreased because separate shielding input/outputdevices are not required when the shielding wire (e.g., the shieldingwire(s) 106 of FIG. 1 and the shielding wire(s) 206 of FIG. 2) does notcouple to any of the array of fingers. Moreover, an effect of acrosstalk may be minimized when each shielding wire is between twosignal wires (e.g., the signal wire(s) 108 of FIG. 1 and the signalwire(s) 208 of FIG. 2) on either side of each shielding wire (e.g., theshielding wire(s) 106 of FIG. 1 and the shielding wire(s) 206 of FIG.2). The crosstalk may be further reduced by shortening each signal wire(e.g., the signal wire(s) 108 of FIG. 1 and the signal wire(s) 208 ofFIG. 2) from a design in which the power ring is located between the dieand the array of fingers.

FIG. 4 is a process flow of generating an array of fingers between thepower ring (e.g., the power ring 102 of FIG. 1 and the power ring 202 ofFIG. 2) and the die (e.g., the die 300 of FIG. 3), according to oneembodiment. In operation 402, an array of fingers (e.g., finger(s) 104,204, of FIG. 1-2) may be generated between a power ring (e.g., powerring 102, 202, of FIG. 1-2) and a die (e.g., die 100, 200, 300 of FIG.1-3). In operation 404, a signal wire (e.g., signal wire(s) 108, 208 ofFIG. 1-2) may be applied between a bond pad (e.g., bond pad 110, 210 ofFIG. 1-2) of the die (e.g., die 100, 200, 300, of FIG. 1-3) and aparticular finger (e.g., finger(s) 104, 204, of FIG. 1-2) of the arrayof fingers (e.g., finger(s) 104, 204, of FIG. 1-2).

In operation 406, a shielding wire (e.g., shielding wire(s) 106, 206 ofFIG. 1-2) may be applied between an adjacent bond pad (e.g., bond pad110, 210 of FIG. 1-2) and the power ring (e.g., power ring 102, 202, ofFIG. 1-2), such that the shielding wire (e.g., shielding wire(s) 106,206 of FIG. 1-2) is longer than the signal wire (e.g., signal wire(s)108, 208 of FIG. 1-2) and does not couple to any of the array of fingers(e.g., finger(s) 104, 204, of FIG. 1-2). In operation 408, at least oneof the shielding wire (e.g., shielding wire(s) 106, 206 of FIG. 1-2) andthe signal wire may be created from at least one of a metal includingcopper, aluminum, silver, and an aluminum doped alloy.

In operation 410, a silicon area of the die (e.g., die 100, 200, 300, ofFIG. 1-3) may be decreased because separate shielding input/outputdevices are not required when the shielding wire (e.g., shieldingwire(s) 106, 206 of FIG. 1-2) does not couple to any of the array offingers (e.g., finger(s) 104, 204, of FIG. 1-2). In operation 412, aneffect of a crosstalk may be minimized when the shielding wire (e.g.,shielding wire(s) 106, 206 of FIG. 1-2) is between two signal wires(e.g., signal wire(s) 108, 208 of FIG. 1-2) on either side of theshielding wire (e.g., shielding wire(s) 106, 206 of FIG. 1-2).

FIG. 5 is a process flow of generating the power ring (e.g., the powerring 102 of FIG. 1 and the power ring 202 of FIG. 2) between the arrayof fingers and the die, according to one embodiment. In operation 502, apower ring (e.g., power ring 102, 202, of FIG. 1-2) may be generatedbetween an array of fingers (e.g., finger(s) 104, 204, of FIG. 1-2) anda die (e.g., die 100, 200, 300, of FIG. 1-3). In operation 504, a set ofconductive arms may be coupled which each perpendicularly extend fromthe power ring (e.g., power ring 102, 202, of FIG. 1-2) to a location ata farthest edge of each finger (e.g., finger(s) 104, 204, of FIG. 1-2)of the array of fingers (e.g., finger(s) 104, 204, of FIG. 1-2).

In operation 506, a signal wire (e.g., signal wire(s) 108, 208 of FIG.1-2) may be applied between a bond pad (e.g., bond pad 110,210 of FIG.1-2) of the die (e.g., die 100,200, 300, of FIG. 1-3) and a particularfinger (e.g., finger(s) 104, 204, of FIG. 1-2) of the array of fingers(e.g., finger(s) 104, 204, of FIG. 1-2). In operation 508, a shieldingwire (e.g., shielding wire(s) 106, 206 of FIG. 1-2) may be appliedbetween an adjacent bond pad (e.g., bond pad 110, 210 of FIG. 1-2) andthe power ring (e.g., power ring 102, 202, of FIG. 1-2), such that theshielding wire (e.g., shielding wire(s) 106, 206, of FIG. 1-2) issubstantially equal in length to the signal wire (e.g., signal wire(s)108, 208, of FIG. 1-2) and such that the shielding wire (e.g., shieldingwire(s) 106, 206 of FIG. 1-2) couples to a particular conductive arm(e.g., conductive arm 212 of FIG. 2) of the set of conductive armsrather than to any of the array of fingers (e.g., finger(s) 104, 204, ofFIG. 1-2).

In operation 510, at least one of the shielding wire (e.g., shieldingwire(s) 106, 206 of FIG. 1-2) and the signal wire (e.g., signal wire(s)108, 208 of FIG. 1-2) may be created from at least one of a metalincluding copper, aluminum, silver, and an aluminum doped alloy. Inoperation 512, a silicon area of the die (e.g., die 100, 200, 300, ofFIG. 1-3) may be decreased because separate shielding input/outputdevices are not required when the shielding wire (e.g., shieldingwire(s) 106, 206 of FIG. 1-2) does not couple to any of the array offingers (e.g., finger(s) 104, 204, of FIG. 1-2). In operation 514, aneffect of a crosstalk may be minimized when the shielding wire (e.g.,shielding wire(s) 106, 206 of FIG. 1-2) is between two signal wires(e.g., signal wire(s) 108, 208 of FIG. 1-2) on either side of theshielding wire (e.g., shielding wire(s) 106, 206 of FIG. 1-2).

Although the present embodiments have been described with reference tospecific example embodiments, it will be evident that variousmodifications and changes may be made to these embodiments withoutdeparting from the broader spirit and scope of the various embodiments.For example, the various devices, modules, analyzers, generators, etc.described herein may be enabled and operated using hardware circuitry(e.g., CMOS based logic circuitry), firmware, software and/or anycombination of hardware, firmware, and/or software (e.g., embodied in amachine readable medium). For example, the various electrical structureand methods may be embodied using transistors, logic gates, andelectrical circuits (e.g., application specific integrated (ASIC)circuitry and/or in Digital Signal Processor (DSP) circuitry).

In addition, it will be appreciated that the various operations,processes, and methods disclosed herein may be embodied in amachine-readable medium and/or a machine accessible medium compatiblewith a data processing system (e.g., a computer system), and may beperformed in any order (e.g., including using means for achieving thevarious operations). Accordingly, the specification and drawings are tobe regarded in an illustrative rather than a restrictive sense.

What is claimed is:
 1. A microelectronic assembly comprising: a diebetween a high density multilayer wiring board and a resin; a power ringand an array of fingers of the high density multilayer wiring boardadjacent to the die; a set of conductive arms which each perpendicularlyextend from the power ring to a location at a farthest edge of eachfinger of the array of fingers; a set of signal wires each between abond pad of the die and a particular finger of the array of fingers; anda set of shielding wires each between an adjacent bond pad and the powerring, such that each shielding wire is substantially equal in length toeach signal wire and such that each shielding wire couples to aparticular conductive arm of the set of conductive arms rather than toany of the array of fingers.
 2. The microelectronic assembly of claim 1wherein the set of shielding wires are placed between adjacent ones ofeach signal wire to minimize crosstalk between the adjacent ones of eachsignal wire.
 3. The microelectronic assembly of claim 1 furthercomprising creating at least one of each shielding wire and each signalwire from at least one of a metal including copper, aluminum, silver,and an aluminum doped alloy.
 4. The microelectronic assembly of claim 1wherein the array of fingers are moved directly adjacent to the die,such that a length of the signal wire decreases by at least 20% fromthat of a design in which the power ring is located between the die andthe array of fingers.
 5. The microelectronic assembly of claim 1 furthercomprising decreasing a silicon area of the die because separateshielding input/output devices are not required when the shielding wiredoes not couple to any of the array of fingers.
 6. The microelectronicassembly of claim 1 further comprising minimizing an effect of acrosstalk when each shielding wire is between two signal wires on eitherside of each shielding wire, and wherein the crosstalk is furtherreduced by shortening each signal wire from a design in which the powerring is located between the die and the array of fingers.